{411}<148> Texture in Thin-Gauge Grain-Oriented Silicon Steel

Residual Stress Distribution in Grain-oriented Silicon Steel

We investigated the residual stress distribution in a grain of laser-irradiated and gearrolled grain-oriented Fe-3%Si silicon steels by X-ray stress measurement method in order to clarify the effect of residual stresses on magnetic domain refining. Dotted cavity lines were formed by Nd:YAG laser with a power density of 3.3 mJ/pulse for the laserirradiated sample. By using a newly developed X-ra...

Magnetomechanical Damping and Domain Structures in Grain Oriented Silicon Steel Sheets

Kinetics of Secondary Recrystallization in Grain-oriented Silicon Steel Studied by High-temperature Background

Secondary recrystallization id grain-oriented silicon steel is studied by the high-temperature background damping. Abnormal grain growth involves an abrupt drop of the background. The temperatures of initiation and completion of the secondary recrystallization are, thus, determined for the sane sample from the definite change in background with increasing temperature. The background measured on...

Secondary cracking at grain boundaries in silicon thin films

In this article, we report irregular cleavage front transmission at grain boundaries in free-standing polysilicon thin films. When the orientations of two adjacent grains are correlated, the crack may bypass the boundary via a ‘‘tunneling’’ process. Similar behavior can also be achieved if the crack path curves in the grain-boundary-affected zone. Moreover, the separation of crack flanks can be...

Secondary recrystallization characteristics of 3%Si grain-oriented electrical steel

A secondary recrystallization Lab study focusing on the secondary recrystallization temperature and magnetic properties was carried out on cold rolling industrial samples of 3%Si grain-oriented electrical steel produced by low slab reheating temperature technology. The results showed a secondary recrystallization temperature, determined by the observed grain size change, of 1080 C with annealin...